OVERVIEW

Official designation: Fuji 2DI300A-050E (IGBT Module)

Role/Application: A high-power Insulated Gate Bipolar Transistor module for switching high currents in applications like AC inverter drives, uninterruptible power supplies, and welding equipment.

KEY SPECS SUMMARY

Power: VCES 500 V, IC 300 A DC

Interfaces / Ports: High power screw terminals

Indicators: None

Operating Temp: Tj maximum 150 degrees C

Platform / Compatibility: Electrically isolated baseplate

Limit: ICP 600 A (1ms pulse)

Lifecycle: Refer to the latest manufacturer manual.

FREQUENTLY ASKED QUESTIONS

Technical Specifications:

Q: What is the maximum guaranteed repetitive peak collector-emitter voltage rating for this module?

A: The maximum Collector-Emitter Voltage VCES is consistently rated at 500 V.

Wiring & Installation:

Q: What is the required isolation rating between the high-power circuit and the baseplate for mounting safety?

A: The module features an electrically isolated baseplate rated for 2500 V AC for one minute.

Troubleshooting & Compatibility:

Q: What is the typical collector-emitter saturation voltage at its rated 300 A collector current?

A: The typical Collector-Emitter Saturation Voltage VCE(sat) is 2.5 V at 300 A.

Replacement & Upgrades:

Q: What is the recommended upgrade for this discontinued or older 500V IGBT module series?

A: Consult the Fuji Electric cross-reference search for the most compatible modern replacement with the correct power ratings.